POWER SEMICONDUCTOR MODULE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor module capable of inhibiting influences on a semiconductor chip which is caused by a linear expansion coefficient difference between solder and a post electrode even when the post electrode is covered by an electric joining material such as the solder.SOLUTION: A power semiconductor module includes: an insulation substrate 101 where a semiconductor chip 11 is mounted; a printed board 14 where an external connection terminal is disposed on one surface and a post electrode 18 connected with the semiconductor chip is provided on the other surface; and a resin sealing material 24 which encloses the insulation substrate and the printed board 14 therein. The post electrode 18 of the printed board 14 is joined to the semiconductor chip 11 by an electric joining material 19. A length of the post electrode 18 is set to 0.5 mm or shorter and flexural rigidity of the printed board 14 is set to 30 kgf mmor larger.