发明名称 TRANSISTOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a transistor which can be manufactured in high yield, a method of manufacturing the same, a method of manufacturing a semiconductor device, and a method of manufacturing a display device.SOLUTION: The method of manufacturing a transistor includes the steps of: forming a gate electrode; forming a laminated film formed of an organic insulating film and an organic semiconductor film, which faces the gate electrode with a gate insulating film interposed therebetween; and patterning the organic semiconductor film.
申请公布号 JP2014056850(A) 申请公布日期 2014.03.27
申请号 JP20120199098 申请日期 2012.09.11
申请人 SONY CORP 发明人 NOMOTO AKIHIRO;KATSUHARA MAO;KURIHARA KENICHI
分类号 H01L21/336;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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