发明名称 |
TRANSISTOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which can be manufactured in high yield, a method of manufacturing the same, a method of manufacturing a semiconductor device, and a method of manufacturing a display device.SOLUTION: The method of manufacturing a transistor includes the steps of: forming a gate electrode; forming a laminated film formed of an organic insulating film and an organic semiconductor film, which faces the gate electrode with a gate insulating film interposed therebetween; and patterning the organic semiconductor film. |
申请公布号 |
JP2014056850(A) |
申请公布日期 |
2014.03.27 |
申请号 |
JP20120199098 |
申请日期 |
2012.09.11 |
申请人 |
SONY CORP |
发明人 |
NOMOTO AKIHIRO;KATSUHARA MAO;KURIHARA KENICHI |
分类号 |
H01L21/336;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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