SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device of a smaller size and a manufacturing method of the silicon carbide semiconductor device.SOLUTION: A silicon carbide semiconductor device comprises: a silicon carbide substrate including a first region 81 having a first conductivity type, a second region 82 which is provided on the first region and has a second conductivity type, and a third region 83 which is provided on the second region and has the first conductivity type and forms at least a part of a principal surface PT; and a trench TR which pierces the third region 83 and the second region 82 to reach the first region 81 and has sidewall surfaces SW. The sidewall surface SW includes a first part SW1 and a second part SW2 positioned deeper than the first part SW1. The first part SW1 of the sidewall surface SW is inclined at not less than 65° and not more than 70° with respect to the principal surface PT. The second part SW2 of the sidewall surface SW is inclined at not less than 50° and less than 65° with respect to the principal surface PT.