| 摘要 |
According to one embodiment, a power semiconductor device includes first and second electrodes, first, second, third, and fourth semiconductor layers, a first control electrode, and a first insulating film. The first semiconductor layer is provided on the first electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the first semiconductor layer to be separated from the second semiconductor layer. The fourth semiconductor layer is provided on the third semiconductor layer. The second electrode is provided on the fourth semiconductor layer. The first control electrode is provided between the second and third semiconductor layers to be shifted toward the third semiconductor layer. The first insulating film is provided between the first semiconductor layer and the first control electrode, between the second semiconductor layer and the first control electrode, and between the third semiconductor layer and the first control electrode. |
