| 摘要 |
PROBLEM TO BE SOLVED: To provide a power transistor with a protected channel.SOLUTION: A transistor includes: a substrate 102; a well 104 formed in the substrate; a drain including a first impurity region implanted in the well; a source including a second impurity region implanted in the well and spaced apart from the first impurity region; a channel for current from the drain to the source; and a gate 130 to control a depletion region between the source and the drain. The channel has an intrinsic breakdown voltage, and the well, drain and source are configured to provide an extrinsic breakdown voltage lower than the intrinsic breakdown voltage, and such that breakdown occurs in a breakdown region in the well located outside the channel and adjacent the drain or the source. |
