METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal including a process for removing a material deposited in a reaction chamber during a crystal growth efficiently.SOLUTION: A method for producing a group III nitride crystal 11 comprises: a step for cleaning a reaction chamber 110 by introducing HCl gas 1 in the reaction chamber 110; and a step for growing a group III crystal 11 doped with O atoms and Si atoms by a vapor growth in the cleaned reaction chamber 110, in which the group III nitride crystal 11 includes a facet growth region and a C plane growth region and the oxygen concentration of the facet growth region is 1.2×10cmor less.