发明名称 |
RELIABLE INTERCONNECT FOR SEMICONDUCTOR DEVICE |
摘要 |
A method for forming a semiconductor device is presented. A substrate prepared with a dielectric layer formed thereon is provided. A sacrificial and a hard mask layer are formed on the dielectric layer. The dielectric, sacrificial and hard mask layers are patterned to form an interconnect opening. The interconnect opening is filled with a conductive material to form an interconnect. The conductive material is processed to produce a top surface of the conductive material that is substantially planar with a top surface of the sacrificial layer. The sacrificial layer is removed. The sacrificial layer protects the dielectric layer during processing of the conductive material. |
申请公布号 |
US2014084486(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201314094717 |
申请日期 |
2013.12.02 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
ZHANG FAN;BU XIAOMEI;HUI JANE;LEE TAE JONG;HSIA LIANG CHOO |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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