TEMPERATURE GAUGE, SUBSTRATE TREATMENT DEVICE, TEMPERATURE CONTROL METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The temperature in a substrate accommodating chamber can be accurately measured even when the temperature in the substrate accommodating chamber is a higher temperature during a film-forming treatment, and the temperature in the substrate accommodating chamber is therefore controlled with precision. A temperature gauge for measuring the temperature in the substrate accommodating chamber is provided with a second cooling-water circulation chamber for cooling an O-ring that maintains airtightness between a mounting hole and a main body section in the exterior of the substrate accommodating chamber, melting of the O-ring can be forestalled, and the internal pressure of the substrate accommodating chamber can be reliably maintained at a predetermined value. Therefore, the temperature in the substrate accommodating chamber for forming an SiC epitaxial film can be accurately measured, and the temperature in the substrate accommodating chamber can therefore be controlled with precision.