| 摘要 |
PROBLEM TO BE SOLVED: To provide thicker light emitting layers with reduced strain to reduce or reverse the drop in quantum efficiency at high current density.SOLUTION: An n-type region 11 having an in-plane lattice constant a1 is grown over a growth substrate 20. A top surface of the n-type region, which may be GaN, InGaN, AlGaN or AlInGaN, is textured. A strain-relieved light emitting layer 12 having an in-plane lattice constant a2 is then grown over the textured surface. A p-type region 13, which also has the in-plane lattice constant a2, is grown over the strain-relieved light emitting layer 12. |
