| 摘要 |
The invention relates to a method for doping semiconductor substrates by means of a diffusion process, wherein in a first coating phase, at least one dopant source is deposited at least in some areas on a surface of a semiconductor substrate, then in a drive-in phase, at least one dopant diffuses into the semiconductor substrate, and in a second coating phase, the at least one dopant source is deposited again at least in some areas on the semiconductor substrate while at least one dopant simultaneously diffuses into the semiconductor substrate. In said method, the dopant concentration in the area near the surface can be set independently of the diffusion depth of the dopant. The invention further relates to semiconductor substrates doped in such a way. |
