SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a semiconductor device and a manufacturing method therefor. The method comprises: forming a first masking layer (106) on a substrate (100); forming one of a source region and a drain region by using the first masking layer (106) as a mask; forming a second masking layer (120) on the substrate (100) and removing the first masking layer (106); forming a masking sidewall (112) on a sidewall of the second masking layer (120); forming the other one of the source region and the drain region by using the second masking layer (120) and the masking sidewall (112) as masks; removing at least a part of the masking sidewall (112); forming a gate dielectric layer (130) and forming a gate conductor (134) in a sidewall form on the second masking layer (120) or on a sidewall of the remaining part of the masking sidewall (112).