| 摘要 |
PROBLEM TO BE SOLVED: To provide a miniaturized semiconductor device with high reliability and a method of manufacturing the same.SOLUTION: A semiconductor device includes a silicon substrate, a gate insulating film, gate electrodes, an insulating member, a source electrode, and a drain electrode. A plurality of gate trenches are formed on a top surface of the silicon substrate. Curved portions are formed on portions of the top surface of the silicon substrate between the gate trenches. The silicon substrate has a first-conductivity-type drain layer connected to the drain electrode, a second-conductivity-type base layer provided between the gate trenches, and a first-conductivity-type source layer provided at both ends in the width direction of the portions on the base layer and exposed on top surfaces of the portions. |
