| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of reducing 1/f noise.SOLUTION: A gate electrode 3 is provided under a thin-film semiconductor layer 1 via a gate insulating film 2, a gate electrode 7 is provided above the thin-film semiconductor layer 1 via a gate insulating film 4. The gate electrode 7 is disposed so as not to overlap side ends of the thin-film semiconductor layer 1. On the thin-film semiconductor layer 1, a source layer 5 is connected to one end of the thin-film semiconductor layer 1, and a drain layer 6 is connected to the other end of the thin-film semiconductor layer 1, in a gate length direction L. |
