发明名称 Seed Layer Structure and Method
摘要 A seed layer comprises a bottom seed layer portion formed on the bottom of a via opening, a sidewall seed layer portion formed on an upper portion of the sidewall of the via opening and a corner seed layer portion formed between the bottom seed layer portion and the sidewall seed layer portion. The sidewall seed layer portion is of a first thickness. The corner seed layer portion is of a second thickness and the second thickness is greater than the first thickness.
申请公布号 US2014084470(A1) 申请公布日期 2014.03.27
申请号 US201213624664 申请日期 2012.09.21
申请人 COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHIANG CHEN-BIN;WANG HUNG-CHIH;LEE KUEI-PIN;CHOU CHI-YU;LIANG YAO HSIANG
分类号 H01L23/52;H01L21/768 主分类号 H01L23/52
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