发明名称 |
Seed Layer Structure and Method |
摘要 |
A seed layer comprises a bottom seed layer portion formed on the bottom of a via opening, a sidewall seed layer portion formed on an upper portion of the sidewall of the via opening and a corner seed layer portion formed between the bottom seed layer portion and the sidewall seed layer portion. The sidewall seed layer portion is of a first thickness. The corner seed layer portion is of a second thickness and the second thickness is greater than the first thickness. |
申请公布号 |
US2014084470(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201213624664 |
申请日期 |
2012.09.21 |
申请人 |
COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIANG CHEN-BIN;WANG HUNG-CHIH;LEE KUEI-PIN;CHOU CHI-YU;LIANG YAO HSIANG |
分类号 |
H01L23/52;H01L21/768 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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