发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A DUMMY WELL |
摘要 |
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may include first transistors that include a first gate insulating layer having a first thickness and second transistors include a second gate insulating layer having a second thickness less than the first thickness. At least one of the transistors formed on the first or second gate insulating layers may be directly over a dummy well. |
申请公布号 |
US2014084376(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201314091592 |
申请日期 |
2013.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH DONG-YEAN;LEE WOON-KYUNG |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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