发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a first electrode, and a contact region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The first electrode has a first and a second portion. The first portion is provided in a first direction and has a lower end being positioned below a lower end of the third semiconductor region. The second portion is in contact with the first portion and is provided on the third semiconductor region. The contact region is provided between the first portion and the second semiconductor region and is electrically connected to the first electrode and the second semiconductor region.
申请公布号 US2014084359(A1) 申请公布日期 2014.03.27
申请号 US201314025038 申请日期 2013.09.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TSUCHIYA YOSHINORI;SHINOHE TAKASHI
分类号 H01L29/78;H01L29/66 主分类号 H01L29/78
代理机构 代理人
主权项
地址