| 摘要 |
A nonvolatile memory device includes an insulating pattern extending in a first direction, a conductive pattern on the insulating pattern, and an electrode structure extending in the first direction. The electrode structure is adjacent the insulating pattern and conductive pattern, and includes an alternating pattern of gate electrodes and interlayer insulating films. A protection film adjacent a side surface of the electrode structure has a shorter length in the first direction than a length of the electrode structure. |
