| 摘要 |
<p>The present invention provides a power semiconductor module in which deformation of a heat dissipating substrate under thermal stress is suppressed and cracking in a joining layer between the heat dissipating substrate and an insulating substrate is prevented. A power semiconductor module (10) is provided with an insulating substrate (12), a semiconductor element (13, 14) mounted on the insulating substrate (12), a heat dissipating substrate (19) joined to the insulating substrate (12), and a plurality of fins (20) that are provided extending from the heat dissipating substrate (19). In the power semiconductor module (10), a metal plate (21) that is separate from a case (22) that accommodates the fins (20) is joined to the distal ends of the fins (20) that extend from the heat dissipating substrate (19).</p> |
