| 摘要 |
The present invention relates to a semiconductor light emitting diode. More particularly, the present invention relates to a semiconductor light emitting diode as a semiconductor device. According to the embodiment of the present invention, the light emitting diode includes a first clade layer as an n-type (or p-type) semiconductor layer, an active layer of a multi-quantum-well structure partly formed in the upper part of the clade layer, a second clade layer as a p-type (or n-type) semiconductor layer formed in the upper part of the active layer, a first electrode of an n-type (or p-type) partly formed in the upper part of the first clade, and a conductive thin film. |
