| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method, which enable stable manufacturing and simplify a manufacturing process of the semiconductor device which causes Pt to act as an acceptor and has high electric characteristics.SOLUTION: A semiconductor device manufacturing method comprises: depositing an ntype drift layer 2 on an ntype semiconductor substrate 1; performing a plasma treatment on a surface of an oxide film formed on a surface of the ntype drift layer 2 to damage the oxide film; subsequently, patterning the oxide film to form an end shape of the oxide film to be a tapered shape; subsequently, performing proton radiation on the ntype drift layer 2 twice by using the oxide film as a mask to form a point-defect region 3a near a surface of the ntype drift layer 2; and subsequently, coating a silica paste containing Pt of 1 wt% on an exposed region of the surface of the ntype drift layer 2, which is not covered with the oxide film and performing a heat treatment. By doing this, a portion near the surface of the ntype drift layer 2 is inverted to the p-type by Pt atoms which act as acceptors and a p-type inversion enhancement region 3b to be a p-type anode region 3. |
