发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SUPPORT SUBSTRATE AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can consistently reinforce a wafer from thinning of the wafer to an inspection of semiconductor device electric characteristics; and provide a semiconductor device manufactured by the manufacturing method, a support substrate and a semiconductor manufacturing apparatus.SOLUTION: A semiconductor device manufacturing method comprises: a process of applying to a rear face side of a semiconductor substrate to which a first support substrate is applied on a surface side where semiconductor devices are formed, a second support substrate in which through holes are formed in a manner such that the through holes overlap the semiconductor devices, respectively; a process of detaching the first support substrate; a process of measuring electric characteristics of the semiconductor devices by bringing probes of an electric characteristic inspection device into contact with a surface electrode of each semiconductor device exposed by detachment of the first support substrate and a back electrode which is exposed from each through hole, of each semiconductor device; a process of sucking the semiconductor device by a collet from the surface side of the semiconductor substrate; and a process of picking up the semiconductor device by a pick-up pin from the through hole.
申请公布号 JP2014056949(A) 申请公布日期 2014.03.27
申请号 JP20120201132 申请日期 2012.09.13
申请人 TOSHIBA CORP 发明人 TSUJII HIROSHI
分类号 H01L21/67;H01L21/683 主分类号 H01L21/67
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