| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device driving method which reduces power consumption.SOLUTION: In a semiconductor device driving method, when a conducting state and a non-conducting state of an n-channel transistor and a p-channel transistor with gates being electrically connected with each other are switched during a first period, a switch for controlling electrical connection between first wiring and second wiring together with the n-channel transistor and the p-channel transistor is switched to a non-conducting state, and the switch is switched to the non-conducting state during a second period. The switch has a channel formation region in a semiconductor which has bandgap wider than that of silicon and an intrinsic carrier density lower than that of silicon. |
