| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor element with low loss, low noise, and low on-resistance.SOLUTION: There is provided a power semiconductor element including a stacked body, gate electrodes, and first to third electrodes. The stacked body includes first to fifth semiconductor layers. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layers are plurally provided in the second semiconductor layer, and are arranged in a first direction perpendicular to the stacking direction of the first semiconductor layer and the second semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer. The fifth semiconductor layers are provided in the fourth semiconductor layer so as to be spaced apart from the second semiconductor layer. The gate electrode are plurally provided in the stacked body. The first electrodes are provided under the plurality of gate electrodes. The second electrode is electrically connected to the first semiconductor layer. The third electrode is electrically connected to the fifth semiconductor layer. Any of the plurality of first electrodes is electrically connected to the gate electrodes. Any of the other first electrodes is electrically connected to the third electrode. |
