| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving normally-off operation.SOLUTION: A semiconductor device includes: a first semiconductor layer containing AlGaN (0≤X≤1); a second semiconductor layer provided on the first semiconductor layer, containing AlGaN (0≤Y≤1 and X<Y), and having a larger band gap than the first semiconductor layer; and an electrode provided on the second semiconductor layer. A halogen group element is added in at least the second semiconductor layer directly under the electrode. |
