摘要 |
A negative electrode active material for an electric device includes an alloy containing Si in a range from greater than or equal to 17% by mass to less than 90% by mass, Ti in a range from 10% by mass to 83% by mass exclusive, Ge in a range from 0% by mass to 73% by mass exclusive, and inevitable impurities as a residue. The negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of, for example, Si, Ti and Ge as targets. An electric device employing the negative electrode active material can achieve long cycle life, and ensure a high capacity and improved cycle durability. |