METHOD OF DEPOSITING METALLIC LAYERS BASED ON NICKEL OR COBALT ON A SEMICONDUCTING SOLID SUBSTRATE; KIT FOR APPLICATION OF SAID METHOD

摘要

The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.