发明名称 |
Contact Structure Of Semiconductor Device |
摘要 |
The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a dielectric layer coating the sidewalls and bottom of the opening, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; and a metal layer filling a coated opening of the dielectric layer. |
申请公布号 |
US2014084340(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201213629109 |
申请日期 |
2012.09.27 |
申请人 |
MANUFACTURING COMPANY, LTD. TAIWAN SEMICONDUCTOR;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG SUNG-LI;SHIH DING-KANG;LIN CHIN-HSIANG;SUN SEY-PING;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/06;H01L21/36 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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