| 发明名称 |
GROUP V DOPING OF GaAs-BASED LAYERS TO IMPROVE RADIATION TOLERANCE OF SOLAR CELLS |
| 摘要 |
Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys. |
| 申请公布号 |
US2014084146(A1) |
申请公布日期 |
2014.03.27 |
| 申请号 |
US201213627481 |
申请日期 |
2012.09.26 |
| 申请人 |
BOISVERT JOSEPH C.;FETZER CHRISTOPHER M.;THE BOEING COMPANY |
发明人 |
BOISVERT JOSEPH C.;FETZER CHRISTOPHER M. |
| 分类号 |
H01L31/18;H01L31/0232;H01L31/0304 |
主分类号 |
H01L31/18 |
| 代理机构 |
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| 地址 |
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