SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING JUNCTION BARRIER SCHOTTKY DIODE

摘要

A silicon carbide semiconductor device is provided with a junction barrier Schottky diode having a substrate (1), a drift layer (2), an insulating film (3), a Schottky barrier diode (10), and a plurality of second conductive layers (8). The Schottky barrier diode (10) is provided with a Schottky electrode (4) and an ohmic electrode (5). A PN diode is configured from the plurality of second conductive layers (8) and the drift layer (2), and the plurality of second conductive layers (8) are formed as stripes only in the direction parallel to a rod-shaped stacking fault.