| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of contamination caused by impurities contained in a color filter.SOLUTION: A semiconductor device includes: a thin-film transistor; a source electrode and a drain electrode electrically connected with the thin-film transistor; a first insulation film on the thin-film transistor, the source electrode and the drain electrode; a color filter on the first insulation film; a second insulation film on the color filter; and a pixel electrode on the second insulation film, wherein the first insulation film has silicon nitride, the color filter has a first opening part, the second insulation film has a second opening part, the second opening part is disposed inside the first opening part, the pixel electrode is electrically connected with one of the source electrode and the drain electrode via the first opening part and the second opening part and the color filter does not come into contact with the pixel electrode, the source electrode and the drain electrode. |
