发明名称 SEMICONDUCTOR MEASURING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a configuration of a driver integrated circuit which can output voltage that exceeds breakdown voltage of a process and satisfies required device performance (high-speed/high-voltage).SOLUTION: A differential input circuit, a level-shifting circuit, and an output circuit are manufactured using the same process, and are placed so as to be divided into 3 or more chips having different substrate potential (sub-potential). By setting substrate applied voltage of each of the chips so as to be different from one another, output voltage which is larger than breakdown voltage of a process is provided.
申请公布号 JP2014057375(A) 申请公布日期 2014.03.27
申请号 JP20130267119 申请日期 2013.12.25
申请人 HITACHI LTD 发明人 RI UEN;NAKAJO TOKUO;MAKUUCHI MASAMI;KAMIMURA YUHITO
分类号 H03F3/213;H03F3/217 主分类号 H03F3/213
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