| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a vertical semiconductor charge storage element.SOLUTION: A structure of a vertical semiconductor charge storage element comprises a base, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a bottom conductor, a first-side conductor and a second-side conductor which are installed so as to face each other and connected with the bottom conductor. The first-side conductor and the second-side conductor are parallel with each other and form included angles with the bottom conductor, a height of the first-side conductor in a direction away from the base is larger than a height of the second-side conductor in a direction away from the base. The dielectric layer and the upper electrode are formed in order on the surfaces of the base and the lower electrode. An aperture ratio is increased by utilizing the first-side conductor and the second-side conductor at the different heights, so that a difficulty of filling or depositing in subsequent steps is reduced and overall yield is improved. |
