| 摘要 |
The present invention relates to a sputtering method which comprises: a step for loading a substrate on a substrate supporting part installed inside a processing chamber, and forming vacuum in the processing chamber; a step for depositing a first protective layer on the substrate by a sputtering method while moving the substrate; a step for depositing an oxide semiconductor on the first protective layer by the sputtering method while continuously moving the substrate; and a step for depositing a second protective layer on the oxide semiconductor by the sputtering method while moving the substrate. According to the present invention, the interfacial properties of the oxide semiconductor layer can be improved by forming the first protective layer, the oxide semiconductor layer, and the second protective layer in order without destroying vacuum. |
