SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device (1) includes a second oxide film (9) and a pad electrode (5) on a first oxide film (8) that is formed on a front surface (2a) of a semiconductor substrate (2), a contact electrode (6) and a first barrier layer (7) formed in the second oxide film and connected to the pad electrode, a silicide portion (10) formed between the contact electrode and a through-hole electrode layer (12) and connected to the contact electrode and the first barrier layer, a via hole (11) extending from a back surface (2b) of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film (13) formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a secondbarrier layer (14) and a rewiring layer (15) formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.