发明名称 METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES AND DEVICES USING QUANTUM DOT STRUCTURES AND RELATED STRUCTURES
摘要 <p>Methods of fabricating photovoltaic devices include forming a plurality of subcells in a vertically stacked arrangement on the semiconductor material, each of the subcells being formed at a different temperature than an adjacent subcell such that the adjacent subcells have differing effective band-gaps. The methods of fabricating also include inverting the structure, attaching another substrate to the second semiconductor material, and removing the substrate. For example, each of the subcells may comprise a III-nitride material, and each subsequent subcell may include an indium content different than the adjacent subcell. Novel structures may be formed using such methods.</p>
申请公布号 EP2457257(B9) 申请公布日期 2014.03.26
申请号 EP20100720517 申请日期 2010.05.26
申请人 SOITEC 发明人 ARENA, CHANTAL;MCFELEA, HEATHER
分类号 H01L31/0304;H01L31/0352;H01L31/04;H01L31/18 主分类号 H01L31/0304
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