| 摘要 |
The present invention relates to a chemical mechanical polisher. A chemical mechanical polishing process polishes a surface of a wafer to be polished by friction between a polishing pad and the surface of the wafer by applying a predetermined load to the wafer and rotating the wafer and the polishing pad in a state that the surface of the wafer to be polished is positioned on the polishing pad while supplying a slurry onto the polishing pad. A predetermined slurry is supplied to the polishing pad according to a type of a film on the wafer to be polished.Since the slurry is supplied to a rotated polishing pad, most of the slurry is discharged due to centrifugal force, and only a part of the slurry contributes to the chemical mechanical polishing process.The present invention provides a slurry storage ring adhering to the polishing pad to reduce a usage amount of the slurry by performing a polishing process in the slurry storage ring. [Reference numerals] (AA) FIG. 2a; (BB) FIG. 2b |
