REMOVAL OF MASKING MATERIAL

摘要

Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.