| 摘要 |
A magnetic tunnel junction (MTJ) structure comprising:
a MTJ cell comprising at least two vertical side walls (616,620), each of the vertical sidewalls defining a unique magnetic domain (622,624), each adapted to store a digital value,
characterized in that a first of the vertical side walls is separated from a second of the vertical side walls by a distance that is less than a height of the first vertical side wall such that the magnetic domains of the vertical sidewalls are vertical. |
