发明名称 METHOD FOR FABRICATING POLYCRYSTALLINE SILICON THIN FILM NANO STRUCTURE USING AG NANO PARTICLE, POLYCRYSTALLINE SILICON NANO STRUCTURE FABIBRICATED BY THE SAME AND POLYCRYSTALLINE SILICON THIN FILM SOLAR CELL INCLUDING POLYCRYSTALLINE SILICON NANO STRUCTURE
摘要 An embodiment of the present invention relates to a method for forming a nano structure of a polycrystalline silicon thin film through an Ag nanoparticle, a polycrystalline silicon nano structure manufactured by the same and a polycrystalline silicon thin film solar cell comprising the same. The objective of the present invention is to allow a polycrystalline silicon thin film formed on a low price substrate to have a polycrystalline silicon nano structure having a high aspect ratio through an Ag nanoparticle. To achieve the objective, an embodiment of the present invention discloses the method for forming a nano structure of a polycrystalline silicon thin film through an Ag nanoparticle comprising: a substrate preparation step for preparing a substrate; a polycrystalline silicon layer formation step for depositing a polycrystalline silicon layer on the substrate; a metal pattern layer formation step for forming a metal pattern layer having a certain pattern on the polycrystalline silicon layer; a polycrystalline silicon nano structure formation step for forming a polycrystalline silicon nano structure by etching the polycrystalline silicon layer and the metal pattern layer in a first etching process; and a metal pattern layer removal step for removing the metal pattern layer on the polycrystalline silicon nano structure through a second etching process. [Reference numerals] (AA) Start; (BB) End; (S100) Prepare a substrate; (S200) Form a polycrystalline silicon layer; (S300) Form a metal pattern layer; (S400) Form a polycrystalline silicon nano structure; (S500) Remove the metal pattern layer
申请公布号 KR101375738(B1) 申请公布日期 2014.03.26
申请号 KR20120119311 申请日期 2012.10.25
申请人 KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY 发明人 JEONG, CHAE HWAN;LEE, SUN HWA;PARK, SUNG JAE
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
代理机构 代理人
主权项
地址