| 摘要 |
Disclosed is a silicon composition for an electronic device insulating bag. The silicon composition for an electronic device insulating bag by an embodiment of the present invention contains the following: a first silicon polymer obtained by making siloxane in which a hydroxy group is bonded to the end react with vinyltrimethoxy silane, gammaglycidoxy triethylsilane, and a titanium based catalyst; a second silicon polymer formed of an alkoxy group, a hydrogen group, and polydimethyl siloxane bonded with a gammaglycidoxy group; a platinum based catalyst; a room temperature reaction retarder; and a material obtained by the reaction of silica. |
