| 摘要 |
The object is to prevent an increase in permittivity and the deterioration of a layer formation speed when a thin film including preset element, oxygen, carbon, and nitrogen is formed in a low temperature region. After a process of supplying a nitrification gas to a substrate is performed, the thin film including preset element, oxygen, carbon, and nitrogen is formed on a substrate by performing a preset time a cycle which successively performs a process of supplying a carbon containing gas to the substrate, a process of supplying a preset element containing gas to the substrate, a process of supplying a carbon containing gas to the substrate, a process of supplying an oxidation gas to the substrate, a process of supply a nitrification gas to the substrate. [Reference numerals] (AA) Silicon containing gas(HCDS); (BB) Carbon containing gas(C_3H_6); (CC) Nitrification gas(NH_3); (DD) Oxide gas(O_2); (EE) Inert gas(N2); (FF) 1 cycle; (GG) 2 cycle; (HH) n cycle |
