| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a copper-oxide (I) film having the performance of a p-type semiconductor and a manufacturing method of a solution for creating the film. <P>SOLUTION: A substrate surface is coated with a solution which is suitable for forming a copper-oxide film and is obtained by dissolving in a polar solvent one or more kinds of chemical compounds selected from ammonia and amine compound and a chelate complex of one or more kinds of copper selected from copper amino polycarboxylic acid complex and copper polycarboxylic acid complex. Thereafter, the substrate is thermally processed in inert gases at 300 to 700°C for one minute to three hours, thereby obtaining the copper-oxide (I) film having the performance of the p-type semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
