发明名称
摘要 <p>According to one embodiment, a semiconductor storage device includes cells, and a sense amplifier. Each of the cells is connected to a bit line. The sense amplifier reads out data. The sense amplifier includes a first transistor to third transistor, and a switch. The first transistor has one end of a current path, the other end, and a gate. The second transistor has one end, and the other end. The second transistor has one of a first and a second supply ability. The third transistor has one end, and the other end. The third transistor has one of a third and a fourth supply ability. The switch grounds the second and the third transistors. The sense amplifier turns off the first transistor after transferring the data to an outside, and supplies the second signal to the switch to set gates of the second transistor and third transistor to ground.</p>
申请公布号 JP5454949(B2) 申请公布日期 2014.03.26
申请号 JP20110049550 申请日期 2011.03.07
申请人 发明人
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项
地址
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