| 摘要 |
<p>PURPOSE: A nonvolatile memory control device and control method thereof are provided to complete writing work as much as existing time by omitting verification operation before writing and preventing a drain disturb. CONSTITUTION: A nonvolatile memory cell array(5) includes a plurality of memory cells. A buffer circuit(1) stores data. A write control circuit(2) stores program data in a buffer circuit. A reading control circuit(4) reads data of the memory cell corresponding to program data. The write control circuit compares data of the memory cell and program data.</p> |
