| 摘要 |
<p>A method for reading data from a nonvolatile memory element including a first electrode, a second electrode, and a variable resistance layer which includes a local region having a higher degree of oxygen deficiency than a surrounding region, the method including: applying a third voltage pulse between the first electrode and the second electrode, the third voltage pulse having a voltage with an absolute value smaller than absolute values of voltages of the first voltage pulse and the second voltage pulse; and reading the resistance state of the variable resistance layer by applying a fourth voltage pulse between the first electrode and the second electrode after the applying of a third voltage pulse, the fourth voltage pulse having a voltage with an absolute value smaller than the absolute values of the voltages of the first voltage pulse and the second voltage pulse.</p> |
