发明名称 |
SPLIT GATE FIELD EFFECT TRANSISTOR |
摘要 |
A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent. |
申请公布号 |
EP2491592(A4) |
申请公布日期 |
2014.03.26 |
申请号 |
EP20100825637 |
申请日期 |
2010.10.20 |
申请人 |
VISHAY-SILICONIX |
发明人 |
TERRILL, KYLE;YANG, GAO;PARK, CHANHO |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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