| 发明名称 |
LITHOGRAPHY RINSING FLUID AND PATTERN FORMATION METHOD USING SAME |
| 摘要 |
<p>The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.</p> |
| 申请公布号 |
EP2711776(A1) |
申请公布日期 |
2014.03.26 |
| 申请号 |
EP20120760446 |
申请日期 |
2012.03.22 |
| 申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
WANG XIAOWEI;PAWLOWSKI GEORG;MATSUURA YURIKO |
| 分类号 |
G03F7/32;G03F7/40;H01L21/02;H01L21/027 |
主分类号 |
G03F7/32 |
| 代理机构 |
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