Low voltage bidirectional protection diode

摘要

The diode has layers (3-5) provided on a substrate (1) that is strongly doped from a conductive type. The layers have a doping level greater than specific values, and are laterally bounded by an insulation wafer (7). Each of the layers has thickness less than four micro meters. The layers are resulted from implantation in epitaxial layers with the thickness less than four micro meters. An independent claim is also included for a method for manufacturing a vertical bidirectional protection diode.