发明名称 METHOD OF MANUFACTURING LARGE AREA GALLIUM NITRIDE SUBSTRATE
摘要 Disclosed is a method of fabricating a large area gallium nitride substrate. disclosed method of fabricating the large area gallium nitride substrate includes the steps of forming a buffer layer on a silicon substrate; forming an insulation layer pattern at an edge of a top surface of the buffer layer; forming a GaN layer on the buffer layer; and simultaneously separating the insulation layer pattern and materials at an upper portion and a lower portion of the insulation layer pattern.
申请公布号 KR20140036412(A) 申请公布日期 2014.03.26
申请号 KR20120101806 申请日期 2012.09.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, MOON SANG;PARK, SUNG SOO;PARK, YOUNG SOO
分类号 H01L21/20 主分类号 H01L21/20
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