| 摘要 |
A semiconductor IC includes a semiconductor IC main body having a predetermined circuit formed on a main surface, a metal layer selectively provided on substantially the whole back surface of the semiconductor IC main body excluding the periphery. According to the present invention, the metal layer provided on the semiconductor IC main body can dissipate heat at a high level. Because the metal layer is selectively provided, even when the semiconductor IC main body is thinned by polishing, warpage does not occur easily in a wafer state. The metal layer is selectively provided at the center of the back surface of the semiconductor IC. Therefore, a laminate of a semiconductor wafer and a thick metal does not need to be diced. As a result, chipping on the disconnected surface can be prevented effectively. |
